Vacancy–related Defects and GOI Performance

Agglomerated vacancy-related defects are known commonly as D-defects or as COPs when they intersect the wafer surface. Although recent data has shown a decreasing sensitivity of GOI to COPs at gate oxide thickness of less than 100Ĺ, it is believed that the presence of the vacancy-related defects will have a certain impact on device performance and yield.

ADVANTA™’s COPs are reduced in number and are present only in the central core region, which produces a material with high GOI.

Intrinsic Gettering

In addition to low COP densities, many customers also require intrinsic gettering. This is achieved in ADVANTA™ wafers by using MEMC’s MDZ® patented process. The MDZ® process produces an ideal density of oxygen precipitates and a deep precipitate-free zone. This eliminates the need for additional, costly out-diffusion, nucleation and growth thermal cycles in the customers’ manufacturing lines.

When enhanced by MDZ® ADVANTA™ offers the benefits of robust IG, reduces the risks that may lower device yields, and lowers the customer cost of ownership by IC process reduction and simplification.