Search       Contact Us       Careers       Locations       Sitemap  
MDZ®
Description
Basic Problem
Conventional Approach
MDZ Solution
Questions & Answers
How MDZ is Made
Features & Benefits
MDZ for Reliable Gettering
Precipitate-Free Zone
Flatness
& Nanotopography

MDZ® Literature &
Other (PDFs)
Application Note 1/05
Product Snapshot
MDZ® Description
Print This Page Contact Us Email This Page Bookmark This Page
Magic Denuded Zone® (MDZ®) is a patented, rapid method of achieving reproducible and reliable internal gettering in silicon wafers. It is a Rapid Thermal Process (RTP) based technique in which the oxygen precipitation behavior is controlled by the manipulation of vacancy rather than oxygen concentration profiles. MEMC has engineered the RTP process to create a vacancy concentration depth profile that effectively preprograms the precipitate-free zone depth and precipitate density of the wafer to ideal targets. MDZ® produces a silicon wafer with ideal oxygen precipitation behavior, and reproducible and reliable IG which is nearly independent of the initial oxygen concentration, the thermal history effects from crystal growth, and the IC fab process application.

Magic Denuded Zone®, MDZ®, and the MDZ® logo are registered trademarks of MEMC Electronic Materials, Inc. All rights reserved.

The MDZ® process is protected by the following patents:5,994,761; 6,180,220; 6,204,152; 6,306,733; 6,586,068; 6,849,119; 6,336,968; 6,432,197; 6,709,511; 6,191,010; 6,579,779; 6,713,370



Enter your recipient's email address and click the button to email page:


Copyright © 2005 MEMC Electronic Materials, Inc.  All rights reserved.
Privacy Policy Legal Statement