• A long term silicon solution that will deliver yield and device performance as you transition to advanced device processes.

• A cost effective advanced product that will perform well across your entire range of device technologies.

• The opportunity to improve your total cost of ownership through elimination of furnace steps early in the fab process.

• AEGIS™ will be competitively priced based on the evolving market conditions, the value this product provides, and the services provided by MEMC.

Features	Benefits
Epi p/p- product provides a defect-free layer for device fabrication	Cost effective replacement for N-doped epi, annealed or advanced polished wafers offering the advantages of a mature technology
No harmful crystal defects in the epi layer	No crystal-defect related yields and reliability degradation
Deep precipitate-free zone maintained throughout customer processing	Improved device yield and reliability potential by eliminating all oxygen precipitates in device layer
Deep precipitate-free zone maintained throughout customer processing	Improved device yield and reliability potential by eliminating all oxygen precipitates in device layer
Robust IG protection through MDZ®	Insurance against device yield upsets caused by metallic contamination
Build-in IG template through MDZ® eliminates the need for customer oxygen out-diffusion and nucleation	Improved customer cost of ownership through cycle time reduction
Scalable to 300mm	Ease of transition from 200 to 300 mm
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