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1959 MEMC was the first merchant manufacturer of silicon wafers. First silicon wafer in mass production: 19mm.
1962 MEMC was the first to develop chemical-mechanical polishing for the semiconductor industry.
1966 MEMC discovers readily observable faceted growth lines are real-time indicators of dislocation free crystal in Czochralski Si growth.
1975 First to commercially produce 100mm wafers.
1979 First wafer supplier to control oxygen.
1979 First to commercially produce 125mm wafers.
1981 First to commercially produce 150mm wafers.
1982 MEMC pioneered epi wafers for CMOS applications.
1983 First ozonated DI water for wafer cleaning.
1983 First non-Japanese Silicon Manufacturer to build in Japan.
1984 MEMC was the first to commercialize 200mm wafers in partnership with IBM.
1985 First to develop polysilicon gettering.
1991 MEMC begins commercial production of 300mm wafers.
1991 MEMC developed the first process using granular polysilicon.
1995 MEMC trades on the New York Stock Exchange as an Initial Public Offering (IPO) under the stock symbol "WFR."
1999 MEMC developed MDZ®, a breakthrough thermal processing technique in the mid 90's and was granted the first patent on this technology in 1999. MEMC developed the first defect-free silicon wafer and was granted the first patent on this technology in 1999. This is now marketed as the OPTIAȘ product line.
1999 Perfect SiliconTM brand wafers are yet another breakthrough in silicon technology by eliminating crystal defects at the wafer surface and throughout the wafer bulk.
2001 Texas Pacific Group purchases MEMC from E.ON AG.
2005 TPG Wafer Holdings LLC, completes the sale(s) of 85,000,000 shares of common stock. TPG's beneficial ownership of the company's common stock is reduced from 63% to approximately 25%.
2005 MEMC becomes the world's first company to produce 300mm wafers in Taiwan.

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